(Hong Kong)
Product Summary
The 2SC3356 is an NPN silicon epitaxial transistor, which is designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
Parametrics
2SC3356 absolute maximum ratings: (1)Collector to Base Voltage: 20 V; (2)Collector to Emitter Voltage: 12 V; (3)Emitter to Base Voltage: 3.0 V; (4)Collector Current: 100 mA; (5)Total Power Dissipation: 200 mW; (6)Junction Temperature: 150 ℃; (7)Storage Temperature: -65 to +150 ℃.
Features
2SC3356 features: (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High Power Gain: MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SC3356 |
Other |
|
Data Sheet |
Negotiable |
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2SC3356 R24 |
Other |
|
Data Sheet |
Negotiable |
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2SC3356 R25 |
Other |
|
Data Sheet |
Negotiable |
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|
2SC3356F |
Other |
|
Data Sheet |
Negotiable |
|
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2SC3356-R24/R25 |
Other |
|
Data Sheet |
Negotiable |
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2SC3356R25/R24 |
Other |
|
Data Sheet |
Negotiable |
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2SC3356-T1B R24 |
Other |
|
Data Sheet |
Negotiable |
|
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2SC3356-T1B R25 |
Other |
|
Data Sheet |
Negotiable |
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