Product Summary

The BSM75GB120DN is an IGBT power module. It is a half-bridge module including fast free-wheeling diodes. It is package with insulated metal base plate, the package is half-bridge 1. When it concerned to the technical parameters, the collector-emitter voltage of the BSM75GB120DN is 1200V, the DC collector current is 105A.

Parametrics

BSM75GB120DN absolute maximum ratings:(1)Collector-emitter voltage, VCE: 1200V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE, ±20A; (4)DC collector current, TC = 25 ℃, IC: 75A; (5)DC collector current, TC = 80 ℃, IC: 105A; (6)Pulsed collector current, tp = 1 ms, TC = 25 ℃, ICpuls: 210A; (7)Pulsed collector current, tp = 1 ms, TC = 80 ℃, ICpuls: 150A; (8)Power dissipation per IGBT, TC = 25 ℃, Ptot: 625W; (9)Chip temperature, Tj: +150℃; (10)Storage temperature, Tstg: -55 to +150℃; (11)Thermal resistance, chip case, RthJC, <0.2K/W; (12)Diode thermal resistance, chip case, RthJCD, <0.5K/W; (13)Insulation test voltage, t = 1min. Vis: 2500Vac; (14)Creepage distance: 20mm; (15)Clearance: 11mm; (16)DIN humidity category, DIN 40 040: F; (17)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56.

Features

BSM75GB120DN features:(1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM75GB120DN circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM75GB120DN2
BSM75GB120DN2

Infineon Technologies

IGBT Modules 1200V 75A DUAL

Data Sheet

0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223

Infineon Technologies

IGBT Modules N-CH 1.2KV 105A

Data Sheet

0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se

Infineon Technologies

IGBT Modules IGBT 1200V 75A

Data Sheet

0-6: $67.20
6-10: $60.60