Product Summary

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1700 V
Collector-gate voltage
RGE = 20 kW
VCGR
 1700
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
 75
 110
A
Pulsed  collector current, t
p
 = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
 150
 220
Power dissipation per IGBT
TC = 25 °C
Ptot
 625
W
Chip temperature Tj + 150 °C
Storage temperature Tstg
 -40 ... + 125
Thermal resistance, chip case RthJC  ￡ 0.2 K/W
Diode thermal resistance, chip case RthJCD ￡ 0.63
Insulation test voltage, t = 1min. Vis
 4000 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

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