Product Summary

Product Summary

Manufacturer:  Infineon   
 
Product Category:  IGBT - Standard Modules   
 
RoHS:  No  
 
Product:  IGBT Silicon Modules   
 
Configuration:  Hex   
 
Collector- Emitter Voltage VCEO Max:  1200 V   
 
Collector-Emitter Saturation Voltage:  1.7 V   
 
Continuous Collector Current at 25 C:  325 A   
 
Gate-Emitter Leakage Current:  400 nA   
 
Power Dissipation:  1.15 kW   
 
Maximum Operating Temperature:  + 125 C   
 
Package / Case:  EconoPACK+   
 
Brand:  Infineon Technologies  
 
Maximum Gate Emitter Voltage:  +/- 20 V  
 
Minimum Operating Temperature:  - 40 C  
 
Mounting Style:  Screw  
 
Factory Pack Quantity:  500