Product Summary

Manufacturer:  Infineon    
 
Product Category:  IGBT - Standard Modules    
 
RoHS:  No   
 
Product:  IGBT Silicon Modules    
 
Configuration:  Hex    
 
Collector- Emitter Voltage VCEO Max:  1200 V    
 
Collector-Emitter Saturation Voltage:  1.7 V    
 
Continuous Collector Current at 25 C:  325 A    
 
Gate-Emitter Leakage Current:  400 nA    
 
Power Dissipation:  1.15 kW    
 
Maximum Operating Temperature:  + 125 C    
 
Package / Case:  EconoPACK+    
 
Brand:  Infineon Technologies   
 
Maximum Gate Emitter Voltage:  +/- 20 V   
 
Minimum Operating Temperature:  - 40 C   
 
Mounting Style:  Screw   
 
Factory Pack Quantity:  500