Product Summary

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Parametrics

Continuous Collector Current at 25 C: 1200 A

Gate-Emitter Leakage Current: 400 nA

Power Dissipation: 5.6 kW

Features

Maximum Operating Temperature: + 125 C
Package/Case: IHM 130X140-7
Maximum Gate Emitter Voltage: +/- 20 V

Diagrams

Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 8

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FZ1200R12KE3
FZ1200R12KE3
Infineon Technologies
IGBT Transistors 1200V 1200A SINGLE
Data Sheet
0-2: $384.02
2-3: $345.62
3-5: $307.22
5-10: $292.70
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FZ1200R12HE4
FZ1200R12HE4
Infineon Technologies
IGBT Modules
Data Sheet
0-2: $436.80
2-10: $393.60
FZ1200R12HP4
FZ1200R12HP4
Infineon Technologies
IGBT Modules IGBT 1200V 1200A
Data Sheet
0-2: $436.80
2-10: $393.60
FZ1200R12KE3
FZ1200R12KE3
Infineon Technologies
IGBT Transistors 1200V 1200A SINGLE
Data Sheet
0-2: $384.02
2-3: $345.62
3-5: $307.22
5-10: $292.70
FZ1200R12KF4
FZ1200R12KF4
Infineon Technologies
IGBT Modules 1200V 1200A SINGLE
Data Sheet
0-1: $595.52
1-3: $535.97
3-5: $476.41
5-10: $446.65
FZ1200R12KF5
FZ1200R12KF5
Infineon Technologies
IGBT Modules IGBT 1200V 1200A
Data Sheet
0-2: $785.40
2-10: $708.00
FZ1200R12KL4C
FZ1200R12KL4C
Infineon Technologies
IGBT Modules 1200V 1200A SINGLE
Data Sheet
0-1: $588.01
1-3: $532.53
3-5: $477.06
5-10: $443.78