(Hong Kong)
Product Summary
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Parametrics
Continuous Collector Current at 25 C:1950 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:9.6 kW
Features
Maximum Operating Temperature:+ 125 C
Package / Case:IHM130
Brand:Infineon Technologies
Diagrams
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Factory Pack Quantity:2
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FZ1200R17KF6C_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 1.95KA |
Data Sheet |
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|
FZ1200R17KF6C-B2 |
Infineon Technologies |
IGBT Modules 1700V 1200A SINGLE |
Data Sheet |
Negotiable |
|
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