Product Summary
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 2.6 V
Continuous Collector Current at 25 C: 1300 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 6.6 kW
Maximum Operating Temperature: + 125 C
Package / Case: IHM
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 2
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FZ800R17KF6C-B2 |
Infineon Technologies |
IGBT Modules 1700V 800A SINGLE |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FZ800R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 800A |
Data Sheet |
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FZ800R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 800A SINGLE |
Data Sheet |
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FZ800R12KF5 |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FZ800R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 800A SINGLE |
Data Sheet |
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FZ800R12KS4_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 1.2KA |
Data Sheet |
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FZ800R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 800A SINGLE |
Data Sheet |
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