Product Summary

Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 2.6 V
Continuous Collector Current at 25 C: 1300 A
Gate-Emitter Leakage Current: 400 nA
Power Dissipation: 6.6 kW
Maximum Operating Temperature: + 125 C
Package / Case: IHM
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 2