(Hong Kong)
Product Summary
The BTS711L1 is a N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Parametrics
BTS711L1 absolute maximum ratings: (1)Supply voltage, Vbb: 43V; (2)Supply voltage for full short circuit protection, Vbb: 34V; (3)Operating temperature range, Tj: -40 to +150; (4)Storage temperature range, Tstg: -55 to +150; (5)Electrostatic discharge capability (ESD)(Human Body Model), VESD: 1.0kV; (6)Input voltage (DC), VIN: -10 to +16V; (7)Current through input pin (DC), IIN: ±2.0mA; (8)Current through status pin (DC), IST: ±5.0mA.
Features
BTS711L1 features: (1)Overload protection; (2)Current limitation; (3)Short-circuit protection; (4)Thermal shutdown; (5)Overvoltage protection(including load dump); (6)Fast demagnetization of inductive loads; (7)Reverse battery protection1); (8)Undervoltage and overvoltage shutdown with auto-restart and hysteresis; (9)Open drain diagnostic output; (10)Open load detection in ON-state; (11)CMOS compatible input; (12)Loss of ground and loss of Vbb protection; (13)Electrostatic discharge (ESD) protection.
Diagrams
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 BTS711L1 |
Infineon Technologies |
Power Switch ICs - Power Distribution SMART 4-CH HI-SIDE PWR SWITCH |
Data Sheet |
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