Product Summary
The D44H11 is a complementary power transistor. The D44H11 is manufactured in low voltage multi epitaxial planar technology. It is intended for general purpose linear and switching applications.
Parametrics
D44H11 absolute maximum ratings: (1)VCEO, Collector-emitter voltage (IB = 0) D44H8 - D45H8: 60 V; (2)Collector-emitter voltage (IB = 0) D44H11 - D45H11: 80 V; (3)VEBO Emitter-base voltage (IC = 0): 5 V; (4)IC Collector current: 10 A; (5)ICM Collector peak current: 20 A; (6)PTOT Total dissipation at Tcase = 25 ℃: 50 W; (7)TSTG Storage temperature: -55 to 150 ℃; (8)TJ Max. operating junction temperature: 150 ℃.
Features
D44H11 features: (1)Low collector-emitter saturation voltage; (2)Fast switching speed.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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D44H11 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Gen Pur Switch |
Data Sheet |
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D44H11E3 |
Other |
Data Sheet |
Negotiable |
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D44H11TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN/80V/8A |
Data Sheet |
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D44H11J3 |
Other |
Data Sheet |
Negotiable |
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D44H11G |
ON Semiconductor |
Transistors Bipolar (BJT) 10A 80V 50W NPN |
Data Sheet |
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D44H11FP |
TRANS NPN 80V 10A TO-220FP |
Data Sheet |
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