Product Summary
The IXFK44N50 is a N-channel enhancement mode fast intrinsic diode avalanche rated.
Parametrics
IXFK44N50 absolute maximum ratings: (1)VDSS when TJ = 25℃ to 150℃: 500 V; (2)VDGR when TJ = 25℃ to 150℃; RGS = 1 MΩ 500 V; (3)VDS Continuous ±20 V; (4)VGSM Transient ±30 V; (5)ID25 when TC = 25℃: 44 A; (6)ID(RMS) External lead current limit: 48 A; (7)IDM when TC = 25℃, pulse width limited by TJM: 176 A; (8)IAR when TC = 25℃: 24 A; (9)EAR when TC = 25℃: 30 mJ; (10)EAS when TC = 25℃ 4 J; (11)dv/dt when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS: 5 V/ns.
Features
IXFK44N50 features: (1)International standard packages; (2)Molding epoxies meet UL94V-0 flammability classification; (3)SOT-227B miniBLOC with aluminium nitride isolation; (4)Low RDS (on) HDMOSTM process; (5)Unclamped Inductive Switching (UIS) rated; (6)Fast intrinsic rectifier.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IXFK44N50 |
Ixys |
MOSFET 500V 44A |
Data Sheet |
Negotiable |
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IXFK44N50F |
Ixys |
MOSFET HiperRF Power MOSFET 500V, 44A, 0.12 Ohm |
Data Sheet |
Negotiable |
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IXFK44N50P |
Ixys |
MOSFET 500V 44A |
Data Sheet |
Negotiable |
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IXFK44N50Q |
Ixys |
MOSFET 44 Amps 500V 0.12 Rds |
Data Sheet |
Negotiable |
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