Product Summary

The IXFK44N50 is a N-channel enhancement mode fast intrinsic diode avalanche rated.

Parametrics

IXFK44N50 absolute maximum ratings: (1)VDSS when TJ = 25℃ to 150℃: 500 V; (2)VDGR when TJ = 25℃ to 150℃; RGS = 1 MΩ 500 V; (3)VDS Continuous ±20 V; (4)VGSM Transient ±30 V; (5)ID25 when TC = 25℃: 44 A; (6)ID(RMS) External lead current limit: 48 A; (7)IDM when TC = 25℃, pulse width limited by TJM: 176 A; (8)IAR when TC = 25℃: 24 A; (9)EAR when TC = 25℃: 30 mJ; (10)EAS when TC = 25℃ 4 J; (11)dv/dt when IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS: 5 V/ns.

Features

IXFK44N50 features: (1)International standard packages; (2)Molding epoxies meet UL94V-0 flammability classification; (3)SOT-227B miniBLOC with aluminium nitride isolation; (4)Low RDS (on) HDMOSTM process; (5)Unclamped Inductive Switching (UIS) rated; (6)Fast intrinsic rectifier.

Diagrams

IXFK44N50 Outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXFK44N50
IXFK44N50

Ixys

MOSFET 500V 44A

Data Sheet

Negotiable 
IXFK44N50F
IXFK44N50F

Ixys

MOSFET HiperRF Power MOSFET 500V, 44A, 0.12 Ohm

Data Sheet

Negotiable 
IXFK44N50P
IXFK44N50P

Ixys

MOSFET 500V 44A

Data Sheet

Negotiable 
IXFK44N50Q
IXFK44N50Q

Ixys

MOSFET 44 Amps 500V 0.12 Rds

Data Sheet

Negotiable