(Hong Kong)
Product Summary
The MRF329 is a broadband RF power transistor NPN silicon.
Parametrics
MRF329 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 9 Adc; (5)Collector Current — Peak (10 seconds): 12 Adc; (6)Total Device Dissipation @ TC = 25℃ (1) Derate above 25℃: 1.54W/℃; (7)PD: 270 Watts; (8)Storage Temperature Range Tstg –65 to +150 ℃.
Features
MRF329 features: (1)Specified 28 Volt, 400 MHz Characteristics, Output Power = 100 Watts; Minimum Gain = 7.0 dB; Efficiency = 50% (Min); (2)Built-in Matching Network for Broadband Operation Using Double Match Technique; (3)100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR; (4)Gold Metallization System for High Reliability.
Diagrams
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 MRF329 |
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