Product Summary
The FF150R12RT4 is a 34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode. The applications of it are high frequency switching application, motor drives, UPS systems.
Parametrics
FF150R12RT4 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)DC-collector current:150A; (3)repetitive peak collector current:300A; (4)total power dissipation:790W; (5)gate-emitter peak voltage:±20V.
Features
FF150R12RT4 features: (1)extended operation temperature Tvj op; (2)low switching losses; (3)low VCEsat; (4)Tvj op=150℃; (5)VCEsat with positive temperature coefficient.
Diagrams
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![]() FF150R12RT4 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 150A |
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![]() FF150R12KE3_B8 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT 1200V 150A |
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![]() FF150R12KE3G |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 150A DUAL |
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![]() FF150R12KE3G_B2 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 225A |
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![]() FF150R12KS4 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 150A DUAL |
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![]() FF150R12KS4_B2 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 225A |
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![]() FF150R12KT3G |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 225A |
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