Product Summary
The MCD162-08IO1 is a thyristor/diode module.
Parametrics
Absolute maximum ratings: (1)ITRMS, IFRMS: 300 A at TVJ = TVJM; (2)ITAVM, IFAVM: 190 A at TC = 80℃ 180°sine, 181 A at TC = 85℃ 180°sine; (3)ITSM, IFSM: 6000 A at TVJ = 45℃ t = 10 ms (50 Hz), sine, 6400 A at VR = 0, t = 8.3 ms (60 Hz), sine; (4)(di/dt)cr: 150 A/μs at TVJ = TVJM, f =50 Hz, tP =200 μs, VD = 2/3 VDRM; (5)(dv/dt)cr: 1000 V/μs at TVJ = TVJM.
Features
Features: (1)International standard package; (2)Direct copper bonded Al2O3 -ceramic base plate; (3)Planar passivated chips; (4)Isolation voltage 3600 V~; (5)UL registered, E 72873; (6)Keyed gate/cathode twin pins.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
MCD162-08io1 |
Ixys |
Discrete Semiconductor Modules 162 Amps 800V |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
MCD132 |
Other |
Data Sheet |
Negotiable |
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MCD132-08io1 |
Ixys |
Discrete Semiconductor Modules 132 Amps 800V |
Data Sheet |
Negotiable |
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MCD132-12io1 |
Ixys |
Discrete Semiconductor Modules 132 Amps 1200V |
Data Sheet |
Negotiable |
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MCD132-14io1 |
Ixys |
Discrete Semiconductor Modules 132 Amps 1400V |
Data Sheet |
Negotiable |
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MCD132-16io1 |
Ixys |
Discrete Semiconductor Modules 132 Amps 1600V |
Data Sheet |
Negotiable |
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MCD132-18io1 |
Ixys |
Discrete Semiconductor Modules 132 Amps 1800V |
Data Sheet |
Negotiable |
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