Product Summary
The FQU7N20 is a N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of FQU7N20 is especially tailored to minimize on-state resistance, provides superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The FQU7N20 is well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Parametrics
FQU7N20 absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Drain Current: Continuous (TC = 100℃): 3.4 A, Continuous (TC = 25℃): 5.3 A; (3)Drain Current-Pulsed: 21 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 73 mJ; (6)Avalanche Current: 5.3 A; (7)Repetitive Avalanche Energy: 4.5 mJ; (8)Peak Diode Recovery dv/dt: 5.5 V/ns; (9)Power Dissipation (TA = 25℃): 2.5 W; (10)Power Dissipation (TC = 25℃): 45 W, Derate above 25℃: 0.36 W/℃; (11)Operating and Storage Temperature Range: -55 to +150 ℃; (12)Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds: 300 ℃.
Features
FQU7N20 features: (1)5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V; (2)Low gate charge ( typical 8.0 nC); (3)Low Crss ( typical 9.0 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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FQU7N20L |
Other |
Data Sheet |
Negotiable |
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FQU7N20LTU |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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FQU7N20TU |
Fairchild Semiconductor |
MOSFET 200V N-Channel QFET |
Data Sheet |
Negotiable |
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