Product Summary

The MRF9045L is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRF9045L make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Parametrics

MRF9045L absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation, PD: 125W; (4)Storage Temperature Range, Tstg: - 65 to +150℃; (5)Case Operating Temperature, TC: 150℃; (6)Operating Junction Temperature, TJ: 200℃.

Features

MRF9045L features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on Leads. L Suffix Indicates 40μNominal; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9045L test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF9045LR1
MRF9045LR1

Advanced Semiconductor, Inc.

Transistors RF MOSFET Power RF Transistor

Data Sheet

0-1: $46.80
1-10: $39.00
10-25: $35.10
25-50: $31.20
MRF9045LR5
MRF9045LR5

Freescale Semiconductor

Transistors RF MOSFET Power 45W 945MHZ LDMOS NI360L

Data Sheet

Negotiable 
MRF9045LSR1
MRF9045LSR1

Freescale Semiconductor

Transistors RF MOSFET Power 45W 945MHZ LDMOS NI360S

Data Sheet

Negotiable 
MRF9045LSR5
MRF9045LSR5

Freescale Semiconductor

Transistors RF MOSFET Power 45W RF PWR LDMOS NI360S

Data Sheet

Negotiable