Product Summary

The 2N6081 is the RF, microwave transistor, which is applied in 230MHz FM mobile applications.

Parametrics

2N6081 absolute maximum ratings: (1)Collector to base voltage: 36V; (2)Collector to emitter voltage: 18V; (3)Emitter to base voltage: 4V; (4)Continuous collector current: 2.5A; (5)Junction temperature: 200℃; (6)Storage temperature: -65 to +150℃.

Features

2N6081 features: (1)Frequency: 175MHz; (2)Voltage: 12.5V; (3)Power out: 4 to 40w; (4)High power gain; (5)High efficiency; (6)FM classic transistors; (7)Common emiter.

Diagrams

2N6081 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N6081
2N6081

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N60
2N60

Other


Data Sheet

Negotiable 
2N6027
2N6027

Central Semiconductor

SCRs Prog Uni-Junction

Data Sheet

0-2500: $0.41
2500-5000: $0.40
5000-10000: $0.37
2N6027G
2N6027G

ON Semiconductor

SCRs 40V 300mW PUT

Data Sheet

0-1: $0.22
1-25: $0.16
25-100: $0.11
100-500: $0.09
2N6027RL1
2N6027RL1


THYRISTOR PROG UNIJUNCT 40V TO92

Data Sheet

Negotiable 
2N6027RL1G
2N6027RL1G

ON Semiconductor

SCRs 40V 300mW PUT

Data Sheet

0-1: $0.10
1-25: $0.09
25-100: $0.09
100-500: $0.08
2N6027RLRA
2N6027RLRA

ON Semiconductor

SCRs 40V 300mW PUT

Data Sheet

Negotiable