Product Summary
The 2N6081 is the RF, microwave transistor, which is applied in 230MHz FM mobile applications.
Parametrics
2N6081 absolute maximum ratings: (1)Collector to base voltage: 36V; (2)Collector to emitter voltage: 18V; (3)Emitter to base voltage: 4V; (4)Continuous collector current: 2.5A; (5)Junction temperature: 200℃; (6)Storage temperature: -65 to +150℃.
Features
2N6081 features: (1)Frequency: 175MHz; (2)Voltage: 12.5V; (3)Power out: 4 to 40w; (4)High power gain; (5)High efficiency; (6)FM classic transistors; (7)Common emiter.
Diagrams
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![]() 2N6081 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
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![]() 2N60 |
![]() Other |
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![]() 2N6027 |
![]() Central Semiconductor |
![]() SCRs Prog Uni-Junction |
![]() Data Sheet |
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![]() 2N6027G |
![]() ON Semiconductor |
![]() SCRs 40V 300mW PUT |
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![]() 2N6027RL1 |
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![]() THYRISTOR PROG UNIJUNCT 40V TO92 |
![]() Data Sheet |
![]() Negotiable |
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![]() 2N6027RL1G |
![]() ON Semiconductor |
![]() SCRs 40V 300mW PUT |
![]() Data Sheet |
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![]() 2N6027RLRA |
![]() ON Semiconductor |
![]() SCRs 40V 300mW PUT |
![]() Data Sheet |
![]() Negotiable |
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