(Hong Kong)
Product Summary
The BCR562 is a PNP silicon digital transistor.
Parametrics
BCR562 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 50V; (2)Collector-base voltage VCBO: 50V; (3)Emitter-base voltage VEBO: 10V; (4)Input on Voltage Vi(on)： 30V; (5)DC collector current IC： 500 mA; (6)Total power dissipation, TS = 79℃ Ptot: 330 mW; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: - 65 to + 150℃.
Features
BCR562 features: (1)Switching circuit, inverter, interface circuit, driver circuit; (2)Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ).
Diagrams
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 BCR562 |
Other |
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Data Sheet |
Negotiable |
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