Product Summary

The ISSI IS41C16100-50K is a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16100-50K offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100-50K ideal for use in 16-bit and 32-bit wide data bus systems.

Parametrics

IS41C16100-50K absolute maximum ratings: (1)Max. RAS Access Time (tRAC): 50 to 60ns; (2)Max. CAS Access Time (tCAC): 13 to 15ns; (3)Max. Column Address Access Time (tAA): 25 to 30ns; (4)Min. EDO Page Mode Cycle Time (tPC): 20 to 25ns; (5)Min. Read/Write Cycle Time (tRC): 84 to 104ns.

Features

IS41C16100-50K features: (1)TTL compatible inputs and outputs; tristate I/O; (2)Refresh Interval; (3)JEDEC standard pinout; (4)Single power supply: 5V ± 10%; (5)Byte Write and Byte Read operation via two CAS; (6)Industrail Temperature Range -40℃ to 85℃.

Diagrams

IS41C16100-50K FUNCTIONAL BLOCK DIAGRAM

IS41C16100
IS41C16100
Other

Data Sheet
Negotiable 
IS41C16105
IS41C16105
Other

Data Sheet
Negotiable 
IS41C16128
IS41C16128
Other

Data Sheet
Negotiable 
IS41C16256C-35TLI
IS41C16256C-35TLI
ISSI
DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II
Data Sheet
0-270: $2.47
270-540: $2.32
540-1080: $2.22
1080-2565: $2.15
IS41C16257C-35TLI-TR
IS41C16257C-35TLI-TR
ISSI
DRAM 4M,5V,Fast Page Mode DRAM,Async,35ns
Data Sheet
0-1000: $2.27
1000-3000: $2.20
IS41C4100
IS41C4100
Other

Data Sheet
Negotiable