(Hong Kong)
Product Summary
The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor 2SC4552 is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
Parametrics
2SC4552 absolute maximum ratings: (1)Collector to base voltage, VCBO: 100 V; (2)Collector to emitter voltage, VCEO: 60 V; (3)Emitter to base voltage, VEBO: 7.0 V; (4)Collector current (DC), IC(DC): 15 A; (5)Collector current (pulse), IC(pulse): 30 A; (6)Base current (DC), IB(DC): 7.5 A; (7)Total power dissipation, PT (Tc = 25℃): 30 W; (8)Total power dissipation, PT (Ta = 25℃): 2.0 W; (9)Junction temperature, Tj: 150 ℃; (10)Storage temperature, Tstg: -55 to +150 ℃.
Features
2SC4552 features: (1)High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 3 A); VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A); (2)Mold package that does not require an insulating board or insulation bushing.
Diagrams
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 2SC4552 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SC4059-7100 |
Shindengen |
Transistors Bipolar (BJT) V=450 IC=15 HFE=10 |
Data Sheet |
Negotiable |
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2SC4054 |
Other |
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Data Sheet |
Negotiable |
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2SC4134T-TL-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 1A 100V |
Data Sheet |
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2SC4134T-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 1A 100V |
Data Sheet |
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2SC4149-7112 |
Shindengen |
Transistors Bipolar (BJT) VCEO=40 IC=10 HFE=70 |
Data Sheet |
Negotiable |
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2SC4149-7012 |
Shindengen |
Transistors Bipolar (BJT) VCEO=40 IC=10 HFE=70 |
Data Sheet |
Negotiable |
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